Product Summary
The FZ1800R17KF4 is an IGBT Silicon Module.
Parametrics
FZ1800R17KF4 absolute maximum ratings: (1)Collector - Emitter Voltage VCEO Max: 1700 V; (2)Continuous Collector Current at 25 ℃: 1800 A; (3)Maximum Operating Temperature: +125℃; (4)Maximum Gate Emitter Voltage: ±20 V; (5)Minimum Operating Temperature: -40℃.
Features
FZ1800R17KF4 features: (1)Configuration: Triple Common Emitter Common Gate; (2)Collector- Emitter Voltage VCEO Max: 1700 V; (3)Continuous Collector Current at 25℃: 1800 A; (4)Maximum Gate Emitter Voltage: ±20 V; (5)Mounting Style: Screw; (6)Factory Pack Quantity: 1.
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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FZ1800R17KF4 |
Infineon Technologies |
IGBT Modules N-CH 1.7KV 1.8KA |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
FZ1800R12HE4_B9 |
Infineon Technologies |
IGBT Modules IGBT 1200V 1800A |
Data Sheet |
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FZ1800R12HP4_B9 |
Infineon Technologies |
IGBT Modules IGBT 1200V 1800A |
Data Sheet |
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FZ1800R12KF4 |
Infineon Technologies |
IGBT Modules 1200V 1800A SINGLE |
Data Sheet |
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FZ1800R12KF4< |
Infineon Technologies |
IGBT Modules N-CH 1.2KV 1.8KA |
Data Sheet |
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FZ1800R12KL4C |
Infineon Technologies |
IGBT Modules 1200V 1800A SINGLE |
Data Sheet |
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FZ1800R16KF4 |
Infineon Technologies |
IGBT Modules 1600V 1800A SINGLE |
Data Sheet |
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