Product Summary

FF800R17KE3-B2 is a IGBT-Module. This technical information specifies semiconductor devices but guarantees no characteristics. It is valid with the appropriate technical explanations. The valve of collector-emitter saturation voltage is 2,40V. The date threshold voltage IS 5,8V. The gate charge is 9, 00mC.

Parametrics

Absolute Maximum Ratings: (1)collector emitter voltage, Tvj= 25°C, VCES: 1700V; (2)DC collector current, Tc= 80°C, IC, nom: 800A; (3)DC collector current, Tc= 25°C, IC: 1800A; (4)repetitive peak collector current, tp= 1ms, Tc= 80°C, ICRM: 1600A; (5)total power dissipation, Tc= 25°C, Transistor, Ptot: 4,45W; (6)gate emitter peak voltage, VGES: +/- 20V.

Diagrams

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Data Sheet
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Data Sheet
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