(China (Mainland))
Product Summary
The present product data is exclusively subscribed to technically experienced staff. This Data Sheet is describing the specification of the products for which a warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its specifications. Changes to the Data Sheet are reserved.
Parametrics
Absolute Maximum Ratings: (1)collector emitter voltage, Tvj= 25°C, VCES: 1200V; (2)DC collector current, Tc= 80°C, IC, nom: 300A; (3)DC collector current, Tc= 25°C, IC: 480A; (4)repetitive peak collector current, tp= 1ms, Tc= 80°C, ICRM: 600A; (5)total power dissipation, Tc= 25°C, Transistor, Ptot: 1470W; (6)gate emitter peak voltage, VGES: +/- 20V; (7)DC forward current, IF: 300A; (8)repetitive peak forward current, tp= 1ms, IFRM: 600A.
Features
Features:(1)internal insulation: Al2O3; (2)comperative tracking index: 425; (3)mounting torque, screw M6: 3,0 to 6,0Nm; (4)terminal connection torque, terminals M6: 2,5 to 5,0Nm; (5)weight: 340g.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||
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 FD300R12KE3 |
Infineon Technologies |
IGBT Transistors 1200V 300A CHOPPER |
Data Sheet |
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FD3000015 |
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OSC 30MHZ 3.3V SMD |
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FD3000016 |
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OSC 30MHZ 3.3V SMD |
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Negotiable |
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FD300R06KE3 |
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FD300R12KE3 |
Infineon Technologies |
IGBT Transistors 1200V 300A CHOPPER |
Data Sheet |
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