(China (Mainland))
Product Summary
BSM25GP120 is a IGBT-Module. The internal insulation is Al2O3 and weight 180g in total. The data contained in the product data sheet is exclusively intended for technically trained staff. You and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application.
Parametrics
Absolute maximum ratings:(1)repetitive peak reverse voltage, VRRM: 1600V; (2)RMS forward current per chip, IFRMSM: 40A; (3)DC forward current, at the condition of TC = 80°C, Id: 25A; (4)surge forward current, at the condition of tP = 10 ms, Tvj = 25°C, IFSM: 300A; (5)surge forward current, at the condition of tP = 10 ms, Tvj = 150°C, IFSM: 230A; (6)I2t - value, at the condition of tP = 10 ms, Tvj = 25°C, I2t: 450A2s; (7)I2t - value, at the condition of tP = 10 ms, Tvj = 150°C, I2t: 260A2s.
Features
Features: (1)internal insulation: Al2O3; (2)comperative tracking index:225; (3)mounting torque, M: 3±10%Nm; (4)weight, G: 180g.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 BSM25GP120 |
Infineon Technologies |
IGBT Modules 1200V 25A PIM |
Data Sheet |
|
|
||||||||||
|
BSM25GP120_B2 |
Infineon Technologies |
IGBT Modules IGBT 1600V 25A |
Data Sheet |
Negotiable |
|
||||||||||
