(China (Mainland))
Product Summary
The FZ1800R12KF4 is an IGBT module.
Parametrics
FZ1800R12KF4 absolute maximum ratings: (1)Kollektor-Emitter-Sperrspannung collector-emitter voltage VCES :1200 V; (2)Kollektor-Dauergleichstrom TC = 80°C IC,nom: 1800 A; (3)DC-collector current TC = 25 °C IC: 1200 A; (4)Periodischer Kollektor Spitzenstrom repetitive peak collector current tP = 1 ms, TC = 80°C ICRM: 3600 A; (5)Gesamt-Verlustleistung total power dissipation TC=25°C, Transistor Ptot : 11 kW; (6)Gate-Emitter-Spitzenspannung gate-emitter peak voltage VGES: +/- 20V ; (7)Dauergleichstrom DC forward current IF: 1800 A; (8)Periodischer Spitzenstrom repetitive peak forw. current tP = 1 ms IFRM: 3600 A; (9)Isolations-Prüfspannung insulation test voltage RMS, f = 50 Hz, t = 1 min. VISOL: 2.5KV.
Features
FZ1800R12KF4 features: (1)Kollektor-Emitter Satigungsspannung collector-emitter saturation voltage IC = 1800 A, VGE = 15V, Tvj = 25℃ VCE sat:3.2 V; (2)IC = 1800 A, VGE = 15V, Tvj = 125℃ VCE sat: 3.9 V; (3)Gate-Schwellenspannunggate threshold voltage IC = 72 mA, VCE = VGE, Tvj = 25℃ VGE(th) 4,5 5,5 6,5 V; (4)Eingangskapazita input capacitance f = 1MHz,Tvj = 25℃,VCE = 25V, VGE = 0V Cies: 135 nF.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 FZ1800R12KF4 |
Infineon Technologies |
IGBT Modules 1200V 1800A SINGLE |
Data Sheet |
|
|
||||||||||
|
FZ1800R12KF4< |
Infineon Technologies |
IGBT Modules N-CH 1.2KV 1.8KA |
Data Sheet |
|
|
||||||||||
