CM200DY-24H

CM200DY-24H, IGBT Module, 1200V, 200A, Mitsubishi Electric Semiconductor

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Price:: US $50.00~150.00 / piece [Get Latest Price]

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	US $50.00~150.00

PartNumber:: CM200DY-24H

Brand:: Mitsubishi Electric Semiconductor - MES | Pack: DIP | D/C: 10+

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Products Upload time: 2012-08-24

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Part Number:CM200DY-24H
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Product Summary

The CM200DY-24H is an IGBT Module. The device is designed for use in switching applications. The CM200DY-24H consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. The applications of the CM200DY-24H include AC Motor Control, Motion/Servo Control, UPS and Welding Power Supplies.

Parametrics

CM200DY-24H absolute maximum ratings: (1)Junction Temperature, Tj: -40 to 150℃; (2)Storage Temperature, Tstg: -40 to 125℃; (3)Collector-Emitter Voltage (G-E SHORT), VCES: 1200 Volts; (4)Gate-Emitter Voltage (C-E SHORT), VGES: ±20 Volts; (5)Collector Current (TC = 25℃), IC: 200 Amperes; (6)Peak Collector Current, ICM: 400 Amperes; (7)Emitter Current (TC = 25℃), IE: 200 Amperes; (8)Peak Emitter Current, IEM: 400 Amperes; (9)Maximum Collector Dissipation (TC = 25℃, Tj ≤ 150℃), Pc: 1500Watts; (10)Mounting Torque, M6 Main Terminal: -1.96 to 2.94 Nm; (11)Mounting Torque, M6 Mounting: -1.96 to 2.94 Nm; (12)Weight: -400 Grams; (13)Isolation Voltage (Main Terminal to Baseplate, AC 1 min.), Viso: 2500 Vrms.

Features

CM200DY-24H features: (1)Low Drive Power; (2)Low VCE(sat); (3)Discrete Super-Fast Recovery Free-Wheel Diode; (4)High Frequency Operation; (5)Isolated Baseplate for Easy Heat Sinking.