(China (Mainland))
Product Summary
BSM100GT120DN2 is an IGBT Power Module. The VCE is 1200V, and Ic is 150A. If you want to order this module, the ordering code is C67070-A2520-A67. There are three single switches in every module, including fast free-wheeling diodes and package terminals. What is more, every package has insulated metal base plate.
Parametrics
Absolute maximum ratings:(1)Collector-emitter voltage, VCE: 1200 V; (2)Collector-gate voltage, RGE = 20 kW, VCGR: 1200; (3)Gate-emitter voltage, VGE: ± 20; (4)DC collector current, TC = 25 °C, IC: 150A; (5)DC collector current, TC = 80 °C, IC: 100A; (6)Pulsed collector current, tp = 1 ms, TC = 25 °C, ICpuls: 300; (7)Pulsed collector current, tp = 1 ms, TC = 80 °C, ICpuls: 200; (8)Power dissipation per IGBT, TC = 25 °C, Ptot: 680W; (9)Chip temperature, Tj: + 150 °C; (10)Storage temperature, Tstg: -55 to + 150; (11)Thermal resistance, chip case, RthJC: 0.182 K/W; (12)Diode thermal resistance, chip case, RthJCD ￡: 0.36; (13)Insulation test voltage, t = 1min., Vis: 2500 Vac; (14)Creepage distance: 16 mm; (15)Clearance: 11; (16)DIN humidity category, DIN: 40 040 - F -; (17)IEC climatic category, DIN IEC 68-1: - 55 / 150 / 56.
Features
Features: (1)Three single switches; (2)Including fast free-wheeling diodes; (3)Package with insulated metal base plate; (4)Solderable Terminals.
Diagrams
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 BSM100GT120DN2 |
Infineon Technologies |
IGBT Modules 1200V 100A TRIPACK |
Data Sheet |
Negotiable |
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BSM100GAL120DLCK |
Infineon Technologies |
IGBT Modules 1200V 100A CHOPPER |
Data Sheet |
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BSM100GAL120DN2 |
Infineon Technologies |
IGBT Modules 1200V 100A CHOPPER |
Data Sheet |
Negotiable |
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BSM100GAR120DN2 |
Infineon Technologies |
IGBT Transistors 1200V 100A DUAL |
Data Sheet |
Negotiable |
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BSM100GB120DLC |
Infineon Technologies |
IGBT Modules 1200V 100A DUAL |
Data Sheet |
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BSM100GB120DLCK |
Infineon Technologies |
IGBT Modules 1200V 100A DUAL |
Data Sheet |
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BSM100GB120DN2 |
Infineon Technologies |
IGBT Modules 1200V 100A DUAL |
Data Sheet |
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