(China (Mainland))
Product Summary
The TT210N16KOF is a Phase Control Thyristor Module.
Parametrics
TT210N16KOF absolute maximum ratings: (1)repetitive peak forward off-state and reverse voltages, Tvj = -40℃ Tvj max, VDRM, VRRM: 1600V to 1800V; (2)non-repetitive peak forward off-state voltage, VDSM: 1600V to 1800V; (3)non-repetitive peak reverse voltage, VRSM: 1700V to 1900V; (4)maximum RMS on-state current, ITRMSM: 410A; (5)average on-state current, TC = 85℃, ITAVM: 210A; TC = 73℃, ITAVM: 261A; (6)surge current, Tvj = 25℃, tP = 10 ms, ITSM: 6600A; Tvj = Tvj max, tP = 10 ms, ITSM: 5800A; (7)I2t-value, Tvj = 25℃, tP = 10 ms, I2t: 218,000A2s; Tvj = Tvj max, tP = 10 ms, I2t: 168,000A2s; (8)critical rate of rise of on-state current, DIN IEC 747-6; (9)f = 50 Hz, iGM = 1 A, diG/dt = 1 A/μs, (diT/dt)cr: 150A/μs; (10)critical rate of rise of off-state voltage, Tvj = Tvj max, vD = 0,67 VDRM 6.Kennbuchstabe / 6th letter F, (dvD/dt)cr: 1000 V/μs.
Features
TT210N16KOF features: (1)on-state voltage, Tvj = Tvj max , iT = 700 A, VT: max.1.65V; (2)Tvj = Tvj max , iT = 700 A, Tvj = Tvj max, V(TO): 1 V; (3)slope resistance, Tvj = Tvj max, rT: 0,85 mΩ; (4)gate trigger current, Tvj = 25℃, vD = 6 V, IGT: max. 200 mA; (5)gate trigger voltage, Tvj = 25℃, vD = 6 V, VGT: max. 2 V; (6)gate non-trigger current, Tvj = Tvj max , vD = 6 V, IGD max: 10mA; Tvj = Tvj max , vD = 0,5 VDRM, IGD max.: 5mA; (7)gate non-trigger voltage, Tvj = Tvj max , vD = 0,5 VDRM, VGD max: 0.2 V; (8)holding current, Tvj = 25℃, vD = 6 V, RA = 5 Ω IH max: 300 mA; (9)latching current, Tvj = 25℃, vD = 6 V, RGK ≥ 10 Ω, iGM = 1 A, diG/dt = 1 A/μs, tg = 20 μs, IL max: 1200 mA; (10)forward off-state and reverse current, Tvj = Tvj max, vD = VDRM, vR = VRRM, iD, iR max: 50 mA; (11)gate controlled delay time, DIN IEC 747-6, Tvj = 25℃,iGM = 1 A, diG/dt = 1 A/μs, tgd max: 3 μs.
Diagrams
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 TT210N16KOF |
Infineon Technologies |
Discrete Semiconductor Modules 1600V 410A DUAL |
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TT210N16KOF-AK34 |
Infineon Technologies |
SCRs PCT 1600V 210A |
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