Product Summary
The BSM200GA120DN2IGBT is a power module.
Parametrics
BSM200GA120DN2IGBT absolute maximum ratings : (1)Collector-emitter voltage: 1200V; (2)Collector-gate voltage (RGE = 20 kW): 1200V; (3)Gate-emitter voltage : ± 20V; (4)DC collector current: 200A TC = 25 °C; 300A TC = 80 °C; (5)Pulsed collector current, tp = 1 ms: 600A TC= 25 °C; 400A TC= 80°C; (6)Power dissipation per IGBT TC = 25 °C: 1550W; (7)Chip temperature: +150 °C; (8)Storage temperature: -40 ... + 125°C; (9)Thermal resistance, chip case: ≦ 0.08 K/W; (10)Diode thermal resistance, chip case : ≦ 0.15 K/W; (11)Insulation test voltage, t = 1min. : 2500 Vac; (12)Creepage distance: 20 mm; (13)Clearance: 11mm.
Features
BSM200GA120DN2IGBT features : (1)Single switch; (2)Including fast free-wheeling diodes; (3)Package with insulated metal base plate.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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BSM200GA120DN2 |
Infineon Technologies |
IGBT Modules 1200V 200A SINGLE |
Data Sheet |
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BSM200GA120DN2C |
Infineon Technologies |
IGBT Modules IGBT 1200V 200A |
Data Sheet |
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BSM200GA120DN2F |
Infineon Technologies |
IGBT Modules IGBT 1200V 200A |
Data Sheet |
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BSM200GA120DN2FS |
Infineon Technologies |
IGBT Modules IGBT 1200V 200A |
Data Sheet |
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BSM200GA120DN2FS_E3256 |
Infineon Technologies |
IGBT Modules IGBT 1200V 200A |
Data Sheet |
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BSM200GA120DN2S |
Infineon Technologies |
IGBT Transistors 1200V 200A SINGLE |
Data Sheet |
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BSM200GA120DN2S_E3256 |
Infineon Technologies |
IGBT Modules IGBT 1200V 200A |
Data Sheet |
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