Product Summary
The SKM100GB125DN is an Ultra Fast IGBT Module. The applications of the SKM100GB125DN include switched mode power supplies at FSW > 20kHz, resonant inverters up to 100KHZ, inductive heating, electronic weiders at FSW > 20KHZ.
Parametrics
SKM100GB125DN absolute maximum ratings: (1)TJ=25℃, VCES: 1200V; (2)TJ=150℃, TCASE=25℃, IC: 100A; TCASE=85℃, IC: 80A; (3)ICRM=20xlCnom, ICRM: 150A; (4)VGES: ±20V; (5)VCC=600V; VGE≤20V; TJ=125℃, VCES<1200V, tpsc: 10μs.
Features
SKM100GB125DN features: (1)N channel, homogeneous Si; (2)Low inductance case; (3)Short tail current with low temperature dependence; (4)High short circuit capability, self limiting to 6×Icnom; (5)Fast & soft inverse CAL diodes; (6)Isolated copper baseplate using DCB direct copper bonding technology; (7)Large clearance(10mm) and creepage distances(20mm).
Diagrams
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SKM100GB125DN |
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SKM100GB125DN |
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