(China (Mainland))
Product Summary
BSM150GT120DN2 is an IGBT Power Module. The VCE is 1200V, and Ic is 200A. If you want to order this module, the ordering code is C67070-A2518-A67. It is solderable power module, including fast free-wheeling diodes and 3-phase full-bridge. What is more, every package has insulated metal base plate ..
Parametrics
Absolute maximum ratings:(1)Collector-emitter voltage, VCE: 1200 V; (2)Collector-gate voltage, RGE = 20 kW, VCGR: 1200; (3)Gate-emitter voltage, VGE: ± 20; (4)DC collector current, TC = 25 °C, IC: 200A; (5)DC collector current, TC = 80 °C, IC: 150A; (6)Pulsed collector current, tp = 1 ms, TC = 25 °C, ICpuls: 400; (7)Pulsed collector current, tp = 1 ms, TC = 80 °C, ICpuls: 300; (8)Power dissipation per IGBT, TC = 25 °C, Ptot: 1250W; (9)Chip temperature, Tj: + 150 °C; (10)Storage temperature, Tstg: -55 to + 150; (11)Thermal resistance, chip case, RthJC ￡: 0.12 K/W; (12)Diode thermal resistance, chip case, RthJCD ￡: 0.36; (13)Insulation test voltage, t = 1min., Vis: 2500 Vac; (14)Creepage distance: 20 mm; (15)Clearance: 11mm; (16)DIN humidity category, DIN 40 040: F ; (17)IEC climatic category, DIN IEC 68-1: - 55 / 150 / 56.
Features
Features: (1)Solderable Power module; (2)3-phase full-bridge; (3)Including fast free-wheel diodes; (4)Package with insulated metal base plate.
Diagrams
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 BSM150GT120DN2 |
Infineon Technologies |
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Data Sheet |
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Data Sheet |
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