(China (Mainland))
Product Summary
The BSM300GA170DN2S is an IGBT Power Module.
Parametrics
BSM300GA170DN2S absolute maximum ratings: (1)Collector-emitter voltage, VCE: 1700 V; (2)Collector-gate voltage, RGE = 20 kW, VCGR: 1700V; (3)Gate-emitter voltage, VGE: ±20V; (4)DC collector current, TC = 25℃, IC: 440A; TC = 80℃, IC: 300A; (5)Pulsed collector current, tp = 1 ms, TC = 25℃, ICpuls: 880A; ; (6)TC = 80℃, ICpuls: 600A; (7)Power dissipation per IGBT, TC = 25℃, Ptot: 2500W; (8)Chip temperature, Tj: + 150℃; (9)Storage temperature, Tstg: -40 to +125℃.
Features
BSM300GA170DN2S features: (1)Single switch; (2)Including fast free-wheeling diodes; (3)Package with insulated metal base plate; (4)RG on,min = 5.6 Ohm.
Diagrams
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 BSM300GA170DN2S |
Infineon Technologies |
IGBT Modules 1700V 300A SINGLE |
Data Sheet |
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BSM300GA170DN2S_E3256 |
Infineon Technologies |
IGBT Modules IGBT 1700V 300A |
Data Sheet |
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